Abstract: Defects play an important role in the performance of two-dimensional (2D) materials, such as molybdenum disulfide (MoS2), as they could either deteriorate or improve material properties. These 2D materials have attracted attention for their potential applications as field effect transistors and transistor sando-electronic devices (e.g., tunneling transistors, photodetectors, and flexible electronics). Some suggested that 2D material-based devices could be used in space applications, where solar winds (primarily H+) and galactic cosmic rays (H+, e-, ionized heavy nuclei) can introduce irreversible damage to these electronic devices. It is therefore critical to obtain a mechanistic understanding of damage production mechanisms in 2D materials. In this presentation, we will cover what theory-driven experiments reveal about defect formation and evolution mechanisms in free-standing and substrate-supported MoS2. We will access stability of MoS2 under electron and ion irradiations and develop the requisite fundamental knowledge base needed to understand defect-property relationships in this unique class of materials. Finally, we will look into the future and see how cracking the code of defect dynamics will unlock the hidden potential of MoS2 for applications in devices. 

Biography: Dr. Aitkaliyeva is an Associate Professor of Nuclear Engineering and Materials Science and Engineering at the University of Florida (UF), where she leads the Materials for Nuclear Advancement and Technology in Extreme Environments (MANATEE) research group. Her research concentrates on mechanistic understanding of material degradation mechanisms in extreme environments (i.e., irradiation, temperature). Prior to joining UF in Spring 2017, she was a staff scientist at Idaho National Laboratory (INL). Dr. Aitkaliyeva received her PhD in Materials Science & Engineering and MS in Nuclear Engineering at the Texas A&M University.