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Petrie Wins 3rd Place for Oral Presentation
MSE student Robert Petrie placed 3rd for his oral presentation on Controlling Crystallinity in Atomic Layer Deposited TiO2 Thin Films at the UROP conference at Georgia Tech. His work focused on extending processing time in atomic layer deposition (ALD) in order to deposit anatase (a specific crystalline structure of TiO2) TiO2 at lower temperatures than before thought possible. The work showed that this effect was possible due to an increase in surface diffusion to lattice sites that occurs when extending purge times in ALD. This opens up a new group of temperature sensitive substrates (such as polymer type materials) that can now have their properties altered by depositing anatase TiO2 on them.